maximum ratings all ratings: t c = 25c unless otherwise speci ed. rf power mosfets n - channel enhancement mode 200v 300w 45mhz the ARF466A and arf466b comprise a symmetric pair of common source rf power transistors designed for push- pull scienti c, commercial, medical and industrial rf power ampli er applications up to 45 mhz. they have been optimized for both linear and high ef ciency classes of operation. ? speci ed 150 volt, 40.68 mhz characteristics: ? output power = 300 watts. ? gain = 16db (class ab) ? ef ciency = 75% (class c) ? low cost common source rf package. ? low vth thermal coef cient. ? low thermal resistance. ? optimized soa for superior ruggedness. static electrical characteristics symbol bv dss r ds(on) i dss i gss g fs v gs (th) characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 a) drain-source on-state resistance 1 (v gs = 10v , i d = 6.5a ) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 25v, i d = 6.5a) gate threshold voltage (v ds = v gs , i d = 1ma) min typ max 1000 1.0 25 250 100 3.3 7 9 2 4 unit volts ohms a na mhos volts symbol v dss v dgo i d v gs p d r jc t j ,t stg t l parameter drain-source voltage drain-gate voltage continuous drain current @ t c = 25c gate-source voltage total power dissipation @ t c = 25c junction to case operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. ARF466A_b 1000 1000 13 30 357 0.35 -55 to 150 300 unit volts amps volts watts c/w c ARF466A arf466b to-264 common source 050-4925 rev d 7-2009 microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed.
dynamic characteristics ARF466A_b 30 45 60 75 90 105 120 frequency (mhz) figure 1, typical gain vs frequency class c v dd = 150v p out = 150w 30 25 20 15 10 5 0 gain (db) symbol c iss c oss c rss t d(on) t r t d(off) t f characteristic input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 150v f = 1 mhz v gs = 15v v dd = 500 v i d = 13a @ 25c r g = 1.6w min typ max 2000 165 75 12 10 43 10 unit pf ns functional characteristics symbol g ps test conditions f = 40.68 mhz v gs = 2.5v v dd = 150v p out = 300w no degradation in output power characteristic common source ampli er power gain drain ef ciency electrical ruggedness vswr 10:1 min typ max 14 16 70 75 unit db % 1 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the speci cations and information contained herein. 1 10 100 1000 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 10,000 1000 500 100 50 10 .1 1 10 100 200 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c t c =+25c t j =+150c single pulse operation here limited by r ds (on) c iss c oss c rss 52 10 5 1 .5 .1 1ms 10ms 100ms 100us 050-4925 rev d 7-2009
ARF466A_b typical performance curves 050-4925 rev d 7-2009 t c , case temperature (c) figure 5, typical threshold voltage vs temperature v ds , drain-to-source voltage (volts) figure 6, typical output characteristics 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 25 20 15 10 5 0 0 5 10 15 20 25 30 i d , drain current (amperes) v gs(th) , threshold voltage (normalized) 5.5v 4.5v 5v 6v v gs =15 & 10v 8v 4v figure 7b, transient thermal impedance single pulse z q jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 7a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 table 1 - typical class ab large signal input - output impedance freq. (mhz) z ol ( ) z in - gate shunted with 25 i dq = 100ma z ol - conjugate of optimum load for 300w output at v dd = 150v z in ( ) 2.0 13.5 27.1 40.7 65 17.9 - j 11.2 1.1 - j 4.9 .25 - j 1.5 .15 - j 0.9 .31 + j 2.0 30 - j 1.7 25.7 - j 9.8 18 - j 13.3 12 - j 12.6 6.2 - j 8.9 0.113 c/w 0.236 c/w 0.0130 f 0.147 f power (watts) rc model junction temp ( c) case temperature ( c)
ARF466A_b 050-4925 rev d 7-2009 to - 264 (l) package outline 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. arf - a device arf - b gate drain source source drain gate dimensions in millimeters and (inches) note: these two parts comprise a symmetric pair of rf power transistors and meet the same electrical specifications. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. l1 c1 r1 r2 r3 dut l2 l3 c3 c4 c7 c6 c2 c8 c9 l4 150v + - rf output rf input 40.68 mhz test circuit + - bias 0-12v c5 tl1 c1 -- 2200 pf atc 700b c2-c5 -- arco 465 mica trimmer c6-c8 -- .1 f 500v ceramic chip c9 -- 3x 2200 pf 500v chips cog l1 -- 4t #22 awg .25"id .25 "l ~87nh l2 -- 5t #16 awg .312" id .35"l ~176nh l3 -- 10t #24 awg .25"id ~.5 h l4 -- vk200-4b ferrite choke 3 h r1- r3 -- 1k w 0.5 carbon tl1 -- 38 t-line .175 x 1 in long c1 .45" from gate pin. dut = ARF466A/b microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved.
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